unisonic technologies co., ltd UTT75N03 power mosfet www.unisonic.com.tw 1 of 4 copyright ? 2014 unisonic technologies co., ltd qw-r205-046.b 75a, 30v, n-channel enhancement mode power mosfet ? description the utc UTT75N03 is an n-channel enhancement mode power mosfet, it uses utc?s advanced technology to provide the customers with high switching and a minimum on-state resistance. the utc UTT75N03 is suitable for low voltage applications such as dc/dc converters. ? features * r ds(on) <4m ? @ v gs =10v, i d =40a r ds(on) <7m ? @ v gs =4.5v, i d =30a * low on-resistance ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 UTT75N03l-tn3-r UTT75N03g-tn3-r to-252 g d s tape reel UTT75N03l-tnd-r UTT75N03g-tnd-r to-252d g d s tape reel note: pin assignment: g: gate d: drain s: source ? marking
UTT75N03 power mosfet unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r205-046.b ? absolute maximum rating parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v drain current continuous v gs =10v, t c =25c (note 4) i d 75 a v gs =10v, t c =100c 56 a pulsed (note 1) i dm 300 a total power dissipation t c =25c p d 50 w t a =25c 2 w operating junction temperature range t j -55~+150 c storage temperature range t stg -55~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal resistance parameter symbol ratings unit junction to ambient (pcb mount) (note 3) ja 62.5 c/w junction to case jc 2.5 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 30 v drain-source leakage current i dss v ds =30v, v gs =0v 10 a gate-source leakage current forward i gss v gs =20v, v ds =0v +100 na reverse v gs =-20v, v ds =0v -100 na on characteristics static drain-source on-state resistance (note 2) r ds(on) v gs =10v, i d =40a 4 m ? v gs =4.5v, i d =30a 7 m ? gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 1 3 v dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 3900 pf output capacitance c oss 640 pf reverse transfer capacitance c rss 510 pf gate resistance r g f=1.0mhz 1.5 ? switching parameters turn-on delay time (note 2) t d ( on ) v ds =15v, i d =0.25a, r g =25 ? v gs =10v 78 ns rise time t r 140 ns turn-off delay time t d ( off ) 1100 ns fall time t f 530 ns source- drain diode ratings and characteristics forward on voltage (note 2) v sd i s =40a, v gs =0v 1.2 v notes: 1. pulse width limited by max. junction temperature 2. pulse test 3. surface mounted on 1 in 2 copper pad of fr4 board 4. package limitation current is 75a
UTT75N03 power mosfet unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r205-046.b ? test circuits and waveforms
UTT75N03 power mosfet unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r205-046.b ? typical characteristics drain current, i d (a) drain current, i d (a) drain current, i d (a) continuous drain-source current, i sd (a) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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